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Rectifier Diode Circuit Operating And Its Applications

已有 200 次閱讀 2020-5-29 14:39 |個人分類:科技

Diodes are broadly applied semiconductor system. A rectifier diode is usually a two-lead semiconductor that enables existing to move in only a person way. Normally, p-N junction Diode is formed by joining with each other n-type and p-type semiconductor supplies. The p-type facet is termed the anode and the n-type side is called the cathode. Many varieties of diodes are utilized for a wide selection of apps. Rectifier diodes are a important element in electric power provides the place they can be accustomed to change AC voltage to DC voltage. The Zener diodes are useful for voltage regulation, avoiding undesired versions in DC materials in just a circuit.
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Rectifier Diode Circuit Operating,Both of those the n-type & p-type components are chemically combined with a special fabrication technique which results in the formation of a p-n junction. This p-N junction has two terminals which can be known as as electrodes and due to this reason, it is referred to as to be a DIODE (Di-ode).If an external DC supply voltage is applied to any electronic device through its terminals, it is termed as Biasing.Forward Biased Diode:Forward Biasing: In a pN junction diode, the positive terminal of a voltage source is connected to the p-type facet, as well as the negative terminal is connected to the n-type facet, the diode is said to be in forwarding bias condition.The electrons get repelled by the negative terminal of DC voltage supply and drift towards the positive terminal.So, under the influence of applied voltage, this electron drift causes current to flow in a semiconductor. This recent is termed as Drift current. As majority carriers are electrons, present-day in n-type is the electron current.
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Unbiased Rectifier Diode:When no voltage supplied to a rectifier diode then it is named as an Unbiased Diode, N-side will have a majority number of electrons, and very few numbers of holes (due to thermal excitation) whereas the p- side will have a majority charge carriers holes and very few numbers of electrons.In this process, free electrons from N-side will diffuse (spread) into the p aspect and recombine takes place in holes present there, leaving +ve immobile (not moveable) ions in N- side and creating -ve immobile ions in the p side of the diode.The immobile in the n-type aspect near the junction edge. Similarly, the immobile ions in the p-type side near the junction edge. Due to this, numbers of positive ions and negative ions will accumulate at the junction. This region so formed is termed as depletion region.At this region, a static electric field named as Barrier potential is created across the pN junction of the diode.It opposes the further migration of holes and electrons across the junction.
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